CHA8265-98F 27.5–31GHz 25W GaN High Power Amplifier
The UMS CHA8265-98F is a three-stage Ka-Band GaN high power amplifier developed for transmit chains that require high RF output, strong linearity and efficient operation in a compact bare-die format.
Its combination of saturated and linear power performance makes it particularly useful in modern communication systems using complex modulation. Rather than serving only as a saturated RF power stage, the device can also support applications where signal quality, efficiency and usable output back-off are important.
UMS manufactures the amplifier using a robust GaN-on-SiC HEMT process and internally matches its RF input and output to 50Ω. It is primarily intended for Satcom, VSAT, 5G and other Ka-Band microwave systems.
Key Specifications
| Parameter | Value |
| Manufacturer | UMS |
| Part Number | CHA8265-98F |
| Product Type | GaN High Power Amplifier |
| Frequency Range | 27.5–31GHz |
| Saturated Output Power | 44dBm typical, approximately 25W |
| Linear Gain | 25dB typical |
| Power Added Efficiency | 30% typical |
| Linear Output Power | 10W with −25dBc IMD3 |
| Modulated-Signal Performance | −30dBc ACPR at 40dBm average output |
| Modulation Test Condition | 256QAM, 100MHz bandwidth |
| Nominal Drain Bias | 25V |
| Quiescent Drain Current | 340mA |
| Recommended Drain Range | 18–25V |
| RF Matching | 50Ω input and output |
| Semiconductor Process | GaN-on-SiC HEMT |
| Product Form | Bare Die |
| Chip Size | 3.6 × 3.6mm |
When to Select the CHA8265-98F
The CHA8265-98F is a strong candidate when a design requires:
High RF power within the 28GHz Ka-Band region
Support for linear, digitally modulated signals
Adjustable output through drain-bias control
A compact bare-die solution for custom RF modules
GaN-on-SiC performance for demanding transmit chains
Integration into Satcom, VSAT or 5G equipment
For projects that require a packaged amplifier, lower output power or wider frequency coverage, other UMS HPA models should also be evaluated before final selection.
CHA8265-98F Price and RFQ
DataStorageIC provides sourcing support for the UMS CHA8265-98F for engineering evaluation, prototype development and production requirements.
Price and delivery information may vary according to order quantity and factory availability. To obtain an accurate quotation, please provide:
Required quantity
Target delivery date
Shipping destination
Prototype or production requirement
Requested documentation
Any lot, date-code or traceability requirements
Contact DataStorageIC for CHA8265-98F price, datasheet, availability and lead-time information.
Frequently Asked Questions
1. What is the CHA8265-98F used for?
It is designed primarily for Ka-Band transmit systems, including satellite communication, VSAT, 5G infrastructure and high-power microwave equipment.
2. Is the CHA8265-98F supplied in a packaged format?
No. The standard CHA8265-98F is supplied as a bare die and must be integrated into a suitable RF module or microwave assembly.
3. Is it suitable for modulated communication signals?
Yes. UMS characterizes the device using two-tone linearity and wideband 256QAM ACPR measurements, making it relevant to transmitters where modulation quality must be considered.
4. Can the amplifier operate below its maximum output level?
Yes. The supported drain-bias range allows designers to balance RF output, power consumption, efficiency and thermal requirements.
5. What information is needed for a CHA8265-98F quotation?
Provide the required quantity, delivery destination, target date and whether the parts are intended for evaluation or production. Lot-control and traceability requirements should also be stated when applicable.
