Ampleon
Ampleon provides LDMOS and GaN RF power transistors for wireless infrastructure, industrial RF, ISM, broadcast, radar and high-power RF systems. The portfolio covers compact RF power devices, high-power LDMOS transistors, GaN-on-SiC devices and integrated Doherty solutions across frequencies from HF through 5 GHz and beyond.
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Recommended Ampleon RF Power Transistors & GaN Devices
Explore selected Ampleon RF power transistors, GaN HEMTs and integrated Doherty MMICs for 5G infrastructure, massive MIMO, industrial RF, ISM, radar and high-power RF applications. The models below focus on current-generation and high-value devices suitable for new RF designs.
| Part Number | Product Type | Frequency Range | Output Power | Key Applications |
|---|---|---|---|---|
| CLF09H4LS800P | Internally Pre-Matched GaN-on-SiC HEMT | 902–928 MHz | 800 W | 915 MHz ISM, industrial RF heating, plasma generation |
| CLF06H4LS1K5P | Internally Pre-Matched GaN-on-SiC HEMT | 580–650 MHz | 1.6 kW Class | Industrial RF heating, particle accelerators, high-power RF energy |
| G1M3438P70C | Integrated GaN Doherty Power Amplifier Module | 3.4–3.8 GHz | 70 W Peak | 5G massive MIMO, 64T radios, TDD/FDD base stations |
| C5H3440N70D | GaN Doherty RF Power Transistor | 3.4–4.0 GHz | 70 W Class | 5G massive MIMO, broadband base stations, multi-carrier PA |
| C5H4850N55D | GaN Doherty RF Power Transistor | 4.8–5.0 GHz | 55 W | 5 GHz base stations, 5G infrastructure, multi-carrier RF amplifiers |
| B11G4450N91D | 3-Stage Integrated LDMOS Doherty MMIC | 4.4–5.0 GHz | 48.7 W P1dB | 5G macro driver, massive MIMO, macrocell and microcell base stations |
| C4H15P400A | GaN-on-SiC Asymmetric Doherty Transistor | 1432–1517 MHz | 400 W Class | 1.5 GHz base stations, single and multi-carrier RF amplifiers |
| B11G1822N120D | Dual-Section 2-Stage LDMOS Doherty MMIC | 1.8–2.2 GHz | 125 W P3dB | 5G FDD massive MIMO, macrocell driver, LTE/W-CDMA |
| B10H1822N60D | 2-Stage 50 V LDMOS Doherty MMIC | 1.8–2.2 GHz | 53.7 W P1dB | 4G/5G macrocell base-station driver |
| B10H27N70D | 2-Stage 50 V LDMOS Doherty MMIC | 2496–2690 MHz | 70 W P1dB | 2.6 GHz 4G/5G macrocell base-station driver |
| B10G3640N16DL | 3-Stage Integrated LDMOS Doherty MMIC | 3.6–4.0 GHz | 16 W | 5G NR small cells, massive MIMO, multi-carrier base stations |
| C4H10P600A | GaN Asymmetric Doherty RF Power Transistor | 700–1000 MHz | 600 W | Sub-1 GHz 4G/5G macro base stations, multi-carrier RF amplifiers |
| C4H27P400A | GaN Asymmetric Doherty RF Power Transistor | 2620–2690 MHz | 400 W | 2.6 GHz macro base stations, high-band cellular infrastructure |
| C5H3438N110D | GaN Doherty RF Power Transistor | 3.4–3.8 GHz | 110 W | 5G massive MIMO, broadband base-station RF power amplifiers |
| CLF24H4LS300P | Internally Matched GaN-on-SiC HEMT | 2.4–2.5 GHz | 300 W | 2.45 GHz ISM, RF heating, cooking, scientific and medical systems |
| CLS3H3135L-700 | Long-Pulse GaN-on-SiC HEMT | 3.1–3.5 GHz | 700 W Pulsed | S-band radar, weather radar, aerospace and long-pulse radar systems |
Note: Output-power definitions vary by product family and test condition. Values may represent nominal device class, CW power, pulsed power, or output power at a specified gain-compression point. Refer to the latest Ampleon datasheet for final RF design values.
