C5H3337N110D RF power transistor
Mfr.Part #：C5H3337N110D
Manufacturer：Ampleon
Package/Case：8 mm × 8 mm QFN surface-mount package
Description：GaN (Gallium Nitride) RF Doherty power transistor
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Get Price & Availability| Parameter | Specification |
| Technology | 5th Generation GaN-on-SiC HEMT |
| Frequency Range | 3300 – 3700 MHz (3.3–3.7 GHz) |
| Output Power | 110W at 5 dB gain compression |
| Power Gain | 15 dB (typical), 13.4 dB (minimum) |
| Drain Efficiency | 49.5% – 57% |
| Supply Voltage | 50V (typical) |
| Package | QFN-8x8 (8mm × 8mm), 20-pin |
| Configuration | Doherty (Carrier + Peaking amplifiers) |
Availability & RFQ
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