IRF2907ZPBF Discontinued 75V Power MOSFET In Stock
Mfr. Part #: IRF2907ZPBF
Manufacturer: Infineon Technologies, formerly International Rectifier
Package / Case: TO-220AB, 3-lead through-hole
Description: Discontinued 75V N-channel power MOSFET with 4.5mΩ maximum RDS(on) at VGS = 10V, high-current capability and a maximum junction temperature of 175°C.
The IRF2907ZPBF is a legacy 75V N-channel power MOSFET from Infineon Technologies, originally associated with International Rectifier's HEXFET/StrongIRFET portfolio. It combines low on-state resistance, a high package current rating and a rugged TO-220AB through-hole package for power switching applications.
Infineon now marks the IRF2907Z family as End of Life and discontinued. This creates a sourcing challenge for manufacturers, repair companies and maintenance teams that still need the original component for an approved bill of materials, legacy production or field-service support.
DataStorageIC can support enquiries for IRF2907ZPBF in-stock inventory, subject to quantity confirmation and prior sale. Buyers may request lot details, package photos, traceability information and inspection or testing options before placing an order.
IRF2907ZPBF Specifications
| Parameter | IRF2907ZPBF value | Design note |
|---|---|---|
| Product type | N-channel power MOSFET | StrongIRFET / legacy HEXFET family |
| Drain-source voltage, VDS | 75V | Maximum rating |
| Continuous drain current at TC = 25°C | 170A silicon-limited; 160A package/bond-wire limited | Not a guaranteed current in every system |
| Continuous drain current at TC = 100°C | 120A | Requires controlled case temperature |
| Pulsed drain current, IDM | 680A | Subject to pulse width, junction temperature and SOA limits |
| RDS(on) at VGS = 10V | 4.5mΩ maximum; 3.5mΩ typical | Specified at ID = 75A |
| Total gate charge, QG | 180nC typical; 270nC maximum | Specified under datasheet test conditions |
| Gate-drain charge, QGD | 65nC typical | Important for switching-speed calculations |
| Gate-source threshold voltage | 2V to 4V | Threshold is not the recommended full-enhancement drive voltage |
| Maximum gate-source voltage | ±20V | Absolute maximum rating |
| Operating junction temperature | -55°C to +175°C | Thermal design is required |
| Single-pulse avalanche energy | 300mJ tested value | Use only within the datasheet conditions and limits |
| Package | TO-220AB, through-hole | Pin 1 Gate, Pin 2 Drain, Pin 3 Source; tab is Drain |
| Official lifecycle status | End of Life / Discontinued | Confirmed on the Infineon product page |
Typical IRF2907ZPBF Applications
The combination of a 75V drain rating, low RDS(on) and rugged through-hole construction makes the device relevant to legacy designs such as:
DC motor drives and industrial motion controls
Battery-management and battery-disconnect circuits
Low-frequency inverters
High-current DC-DC converters
Power distribution and load-switching modules
Automotive and industrial repair assemblies originally qualified with IRF2907ZPBF
For an existing design, sourcing the original part can reduce the engineering work associated with PCB changes, gate-drive adjustments and regulatory or customer requalification. For a new design, however, an active-generation MOSFET is normally the more sustainable choice.
Is IPP040N08NF2S a Replacement for IRF2907ZPBF?
Infineon identifies IPP040N08NF2S as the official replacement product for the discontinued IRF2907Z. The newer StrongIRFET 2 device is an active 80V N-channel MOSFET in a TO-220 package, with 4.0mΩ maximum RDS(on) and substantially lower typical total gate charge.
| Comparison item | IRF2907ZPBF | IPP040N08NF2S |
| Lifecycle | Discontinued | Active |
| VDS maximum | 75V | 80V |
| RDS(on) maximum at 10V | 4.5mΩ | 4.0mΩ |
| Typical total gate charge | 180nC | 54nC |
| Product-page continuous current at 25°C | 170A silicon-limited / 160A package-limited | 115A |
| Package | TO-220AB | PG-TO220-3 |
Frequently Asked Questions
Is IRF2907ZPBF discontinued?
Yes. Infineon lists IRF2907Z as End of Life and shows the IRF2907ZPBF ordering code as discontinued. Remaining supply is generally limited to authorized-channel remnants, independent inventory and unused legacy stock.
What is the voltage rating of IRF2907ZPBF?
Its maximum drain-source voltage is 75V. The design must still allow sufficient margin for supply variation, switching transients and inductive overshoot.
Can IRF2907ZPBF continuously carry 170A?
Not under arbitrary operating conditions. The 170A value is silicon-limited at a controlled 25°C case temperature, and the package/bond-wire limit is 160A. Real continuous current is usually constrained further by leads, interconnects and thermal design.
Is IRF2907ZPBF a logic-level MOSFET?
It should not be selected as a logic-level device solely because its threshold is 2V to 4V. The published 4.5mΩ maximum RDS(on) is specified at VGS = 10V, so the gate driver must be designed accordingly.
What package does IRF2907ZPBF use?
IRF2907ZPBF uses a three-lead TO-220AB through-hole package. The standard datasheet pin assignment is Gate, Drain and Source, with the metal tab connected to Drain.
What is the recommended replacement for IRF2907ZPBF?
Infineon recommends the active IPP040N08NF2S. It offers an 80V rating, 4.0mΩ maximum RDS(on) and lower typical gate charge, but the full electrical, switching, thermal and safe-operating-area differences must be validated before substitution.
