10-EY122PA008ME-LU38F08T: 1200V Vincotech flowDUAL E2 SiC Half-Bridge Module
Mfr. Part #: 10-EY122PA008ME-LU38F08T
Manufacturer: Vincotech
Product Series: flowDUAL E2 SiC
Package/Case: flow E2, 62.8 × 57.7 × 12 mm
Description: 1200V 200A, 8mΩ SiC MOSFET half-bridge module with Press-Fit pins and an integrated temperature sensor.
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Get Price & Availability10-EY122PA008ME-LU38F08T 1200V 200A SiC Half-Bridge Module
The 10-EY122PA008ME-LU38F08T is a 1200V, 200A SiC MOSFET power module from Vincotech's flowDUAL E2 SiC family. It uses a half-bridge topology with an integrated temperature sensor and is designed for high-efficiency power conversion applications.
With an RDS(on) of approximately 8 mΩ, Press-Fit connection and compact 12 mm housing, the module is suitable for EV charging stations, energy storage systems, solar inverters, industrial power supplies and other high-power conversion systems.
10-EY122PA008ME-LU38F08T Key Specifications
| Manufacturer | Vincotech |
| Part Number | 10-EY122PA008ME-LU38F08T |
| Product Family | flowDUAL E2 SiC |
| Topology | Half-Bridge |
| Voltage Rating | 1200 V |
| Current Rating | 200 A |
| Technology | SiC MOSFET |
| RDS(on) | 8 mΩ |
| Temperature Sensor | Integrated NTC |
| Pin Type | Press-Fit |
| Base Isolation | Al₂O₃ |
| Housing Height | 12 mm |
| Product Status | Series |
Typical Applications
EV charging stations
Battery energy storage systems (BESS)
Solar inverters
Industrial power supplies
High-efficiency DC/AC and DC/DC converters
Welding and cutting equipment
When Should You Choose 10-EY122PA008ME-LU38F08T?
This module is a good fit when your design requires a 1200V SiC half-bridgewith high current capability, low conduction resistance and compact PCB integration.
Compared with traditional IGBT-based modules, SiC MOSFET technology is better suited to high-switching-frequency designs where reduced switching losses, higher efficiency and smaller passive components are important.
10-EY122PA008ME-LU38F08T vs Related Vincotech SiC Modules
| Model | Voltage | Current | RDS(on) | Isolation | Status |
|---|---|---|---|---|---|
| 10-EY122PA008ME-LU38F08T | 1200 V | 200 A | 8 mΩ | Al₂O₃ | Series |
| 10-EY122PA009ME-LU37F18T | 1200 V | 165 A | 9 mΩ | Al₂O₃ | Samples Available |
| 10-EY122PA008ME01-LU38F06T | 1200 V | 200 A | 8 mΩ | AlN | Samples Available |
The 10-EY122PA008ME-LU38F08T is suitable when a standard-production 200A module with Al₂O₃ isolation is required. The ME01 variant uses AlN isolation, while the 009ME version offers a lower current rating.
Equivalent / Cross Reference
According to Vincotech's datasheet, the10-EY122PA008ME-LU38F08T has the listed equivalentFF6MR12W2M1H_B11.
Electrical and mechanical compatibility should still be verified before using any cross-reference part in an existing design.
Related Vincotech Products
Stock, Price & Availability
Need current 10-EY122PA008ME-LU38F08T stock, price or lead time? Send us your required quantity and destination for an availability check and quotation.
If this exact module is unavailable, provide your voltage, current, topology, package and cooling requirements. We can help identify related Vincotech SiC modules or suitable cross-reference options.
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FAQ
Is 10-EY122PA008ME-LU38F08T a SiC or IGBT module?
It is a SiC MOSFET power module using a half-bridge topology.
What is the current rating of 10-EY122PA008ME-LU38F08T?
The module is rated at 200A with a 1200V blocking voltage.
What applications is this module suitable for?
Typical applications include EV charging stations, energy storage systems, solar inverters, industrial power supplies and welding equipment.
