Ampleon BLF20M10LS200P 200W 1.975–2.025GHz LDMOS RF transistor
Mfr. Part #: BLF20M10LS200P
Manufacturer: Ampleon
Product Category: RF Power Transistor
Technology: 10th-Generation 32V LDMOS
Package / Case: ACC-780 / SOT1121B Earless Flanged Ceramic Package
Frequency Range: 1975MHz to 2025MHz
Description: 200W internally matched 32V LDMOS RF power transistor designed for continuous-wave operation across 1975–2025MHz in plasma generators, industrial RF equipment and non-cellular communication systems.
BLF20M10LS200P 200W 1.975–2.025GHz LDMOS Transistor
The Ampleon BLF20M10LS200P is a 200W LDMOS RF power transistor developed for continuous-wave operation across the 1975MHz to 2025MHz frequency band.
Operating from a standard 32V drain supply, the device delivers 200W CW output power at 2000MHz with 17.3dB typical power gain and 69% typical drain efficiency. It is intended for industrial, scientific and medical equipment as well as non-cellular RF communication systems.
The transistor incorporates internal input and output matching, integrated ESD protection and strong load-mismatch capability. These features help simplify the development of compact 2GHz RF power amplifiers used in plasma generation, material processing and specialised communication equipment.
BLF20M10LS200P Specifications
| Parameter | Specification |
| Manufacturer | Ampleon |
| Part Number | BLF20M10LS200P |
| Orderable Part Number | BLF20M10LS200PU |
| Device Type | LDMOS RF power transistor |
| Frequency Range | 1975–2025MHz |
| Nominal Output Power | 200W |
| Test Signal | Continuous wave |
| Drain Voltage | 32V |
| Quiescent Drain Current | 20mA |
| Typical CW Power Gain | 17.3dB |
| Typical CW Drain Efficiency | 69% |
| Typical Pulsed Power Gain | 17.6dB |
| Typical Pulsed Drain Efficiency | 67.20% |
| Typical Input Return Loss | −19dB |
| Minimum Breakdown Voltage | 65V |
| Typical Thermal Resistance | 0.34K/W |
| Package | ACC-780 / SOT1121B |
Typical Applications
The BLF20M10LS200P is suitable for RF amplifier stages used in:
Industrial plasma generators
Semiconductor plasma-processing equipment
Material treatment and processing systems
Scientific RF generators
Medical RF equipment
Industrial 2GHz power amplifiers
Private RF communication systems
Non-cellular communication equipment
Special-purpose communication transmitters
High-power continuous-wave RF systems
Ampleon specifically identifies plasma generators and non-cellular communications as primary applications for the device.
Ordering Information
| Type Number | Orderable Part Number | Package | Packing | Status |
| BLF20M10LS200P | BLF20M10LS200PU | ACC-780 / SOT1121B | 20-unit tray, non-dry pack | Active |
FAQ
What is the frequency range of the BLF20M10LS200P?
The transistor covers 1975MHz to 2025MHz, including a 50MHz-wide operating band centred around 2GHz.
What is the CW output power?
The BLF20M10LS200P provides 200W continuous-wave output power at 2000MHz under the manufacturer’s specified Class-AB test conditions.
What are the typical gain and efficiency?
At 2000MHz and 200W CW output, the typical power gain is 17.3dB and typical drain efficiency is 69%.
Is the BLF20M10LS200P internally matched?
Yes. The device includes internal input and output matching, although an external PCB matching network is still required for the final amplifier design.
How rugged is the transistor?
It can withstand a load mismatch corresponding to VSWR ≥20:1 through all phases at 200W CW output under the specified manufacturer test conditions.
What is the orderable part number?
The active orderable part number is BLF20M10LS200PU, supplied in the ACC-780/SOT1121B ceramic package.
