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AM024050S2WN-00-R 100W 0.25–4GHz GaN SPDT Switch

2026-07-30 10:24:39 DataStorage View times 26
AM024050S2WN-00-R 100W 0.25–4GHz GaN SPDT Switch

Mfr. Part #: AM024050S2WN-00-R

Manufacturer: AMCOM

Package / Case: Bare Die

Description: 0.25–4GHz reflective GaN-on-SiC SPDT switch supporting up to 100W pulsed and 60W CW RF input power, with 1.1dB typical insertion loss and 40dB isolation.

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Product Specifications

ParameterSpecification
Product TypeHigh-Power Reflective SPDT Switch
Semiconductor TechnologyGaN on SiC
Typical Frequency Range0.25–4GHz
Minimum Specified Frequency Range0.5–3.25GHz
Pulsed Power Handling50dBm / 100W typical
CW Power Handling48dBm / approximately 60W typical
Pulsed P0.5dB50dBm typical
CW P0.5dB48dBm typical
Insertion Loss1.1dB typical
Isolation40dB typical
Input Return Loss, On State10dB typical
Output Return Loss, On State10dB typical
Switching Speed100ns
Control Voltage−25V / 0V
Control Current3mA maximum
PackageBare Die
Die Dimensions4.0 × 3.8mm
Operating Temperature−55°C to +85°C
Storage Temperature−55°C to +135°C


The specifications are based on AMCOM’s May 2024 Rev. 0 datasheet. Performance should be confirmed for the required frequency, pulse width, duty cycle, temperature and mounting conditions.

AM024050S2WN-00-R Product Overview

The AM024050S2WN-00-R is a high-power reflective SPDT switch fabricated using a GaN-on-SiC process. It routes one common RF port between two selectable output ports over a typical frequency range of 250MHz to 4GHz.

The switch supports up to 100W pulsed input power and approximately 60W CW input power. Typical RF performance includes 1.1dB insertion loss, 40dB isolation and 100ns switching speed.

Its GaN-on-SiC construction provides substantially higher RF power handling than many conventional low-power GaAs switching devices, making it suitable for transmitter, radar and T/R switching applications.

Key Features

Broadband operation from 0.25GHz to 4GHz

Up to 100W pulsed RF power handling

Up to approximately 60W CW power handling

Reflective SPDT configuration

1.1dB typical insertion loss

40dB typical isolation

100ns switching speed

GaN-on-SiC semiconductor technology

Low control-current requirement

Compact 4.0 × 3.8mm bare die

Switching Control

The device uses two control-voltage inputs, VC1 and VC2:

Selected RF Path         VC1               VC2

RFC to RF1                  −25V                 0V

RFC to RF                      20V               −25V

Only one output path should be enabled at a time. The absolute maximum control voltage is −36V, while the maximum control current is specified at 3mA.

Typical Applications

The AM024050S2WN-00-R is suitable for:

Military radar systems

Commercial communication equipment

Electronic warfare systems

High-power T/R switching

RF test instruments

Transmitter signal routing

High-power switching networks

AMCOM identifies military radar, commercial communications, test instruments and electronic warfare as primary applications.

Bare-Die Integration Notes

The AM024050S2WN-00-R is supplied as a bare die and requires appropriate microwave assembly processes.

The RF design should consider:

Die attachment and thermal contact

Wire-bond length and inductance

50Ω transmission-line transitions

Control-voltage routing

Ground continuity

RF input power and duty cycle

Maximum channel temperature

AMCOM recommends mounting the MMIC in a carrier cut-out area. Its reference test circuit uses 10-mil RO4350 PCB material and additional transmission-line flares near the die for improved RF performance.

Frequently Asked Questions

Does the AM024050S2WN-00-R support 100W CW power?

No. The 100W rating applies to pulsed operation. Typical continuous-wave power handling is 48dBm, equivalent to approximately 60W.

What pulse conditions are used for the 100W rating?

AMCOM’s published pulsed measurements use a 100µs pulse width, a 1ms period and a 10% duty cycle. Actual power handling must be checked for the required pulse conditions.

Is this switch reflective or absorptive?

The AM024050S2WN-00-R is a reflective SPDT switch. The unselected RF output is not internally terminated in 50Ω.

What is the switching speed?

The typical switching speed is 100ns.

Is the device supplied in a packaged format?

The AM024050S2WN-00-R is supplied as a bare die measuring approximately 4.0 × 3.8mm. It requires die attachment and wire bonding.

AM024050S2WN-00-R Price and Availability

DataStorageIC supplies AMCOM RF and microwave components for engineering evaluation, prototype development and production requirements.

Send the full part number and required quantity to request:

AM024050S2WN-00-R price

Current availability and lead time

Official datasheet confirmation

Bare-die packaging information

Shipping and export information

Alternative packaged or connectorised RF switches

Contact DataStorageIC with the required quantity, destination country and delivery schedule to receive an AM024050S2WN-00-R RFQ.


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