Mini-Circuits GNA-63-5W+ 10MHz–6GHz GaN Power Amplifier
Manufacturer: Mini-Circuits
Package / Case: DG1677-8, 5 × 5 mm 32-Lead QFN-Style Package
Description: 10 MHz to 6 GHz GaN-on-SiC MMIC Power Amplifier, +38.5 dBm Typical PSAT, 17.7 dB Gain, 35% PAE, 28V Drain Supply
The Mini-Circuits GNA-63-5W+ is a broadband GaN-on-SiC HEMT MMIC power amplifier covering 10 MHz to 6 GHz. It is designed for RF systems requiring high output power, wide frequency coverage and useful efficiency from a compact surface-mount device.
The amplifier provides 17.7 dB typical small-signal gain, +38.5 dBm typical saturated output power and approximately 35% typical power-added efficiency. Its RF input and output are internally matched to 50Ω, reducing the external matching work required for broadband implementation.
Technical Specifications
| Parameter | Specification |
| Manufacturer | Mini-Circuits |
| Part Number | GNA-63-5W+ |
| Product Type | GaN MMIC Power Amplifier |
| Frequency Range | 10 MHz to 6 GHz |
| Semiconductor Technology | GaN-on-SiC HEMT |
| Impedance | 50Ω |
| Small-Signal Gain | 17.7 dB typical |
| Large-Signal Gain | 12 dB typical |
| Gain Flatness | Less than ±1 dB typical |
| Output P1dB | +33.4 dBm typical |
| Saturated Output Power | +38.5 dBm typical |
| Output Power at +26 dBm Input | Greater than 6W |
| Output IP3 | +42 dBm typical |
| IM3 | −32 dBc typical at +26 dBm per tone output |
| IM5 | −56 dBc typical at +26 dBm per tone output |
| Power-Added Efficiency | 35% typical |
| Input VSWR | 1.57:1 typical |
| Output VSWR | 1.67:1 typical |
| Drain Supply Voltage | +28V |
| Quiescent Drain Current | 400 mA |
| Package Style | DG1677-8 |
| Package Dimensions | 5 × 5 × 1.09 mm |
| Package Type | 32-lead QFN-style surface mount |
| RoHS Status | RoHS compliant |
Applications
The wide 10 MHz to 6 GHz operating range allows the GNA-63-5W+ to support multiple VHF, UHF, L-, S- and C-band applications with one amplifier design.
Typical applications include:
Land-mobile radio systems
Military radio equipment
Radar transmitters and driver stages
Electronic warfare systems
Electronic countermeasure systems
Satellite communication equipment
RF and microwave test systems
Broadband transmitter chains
Laboratory power-amplifier evaluation
These application areas are identified in the official Mini-Circuits product documentation.
Related Mini-Circuits Amplifiers
| Model | Frequency | Gain Typ. | P1dB Typ. | PSAT Typ. | PAE Typ. | Supply | Package |
| GNA-63-5W+ | 10 MHz–6 GHz | 17.7 dB | +33.4 dBm | +38.5 dBm | 35% | 28V, 400 mA | 5 × 5 mm QFN |
| GNA-252-5W+ | 10 MHz–2.5 GHz | 17.6 dB | +33.9 dBm | +40 dBm | 47% | 28V, 400 mA | 4 × 4 mm QFN |
| GVA-63+ | 10 MHz–6 GHz | 20 dB | +18.6 dBm | — | — | 5V, 69 mA | SOT-89 |
Frequently Asked Questions
What frequency range does the GNA-63-5W+ cover?
The amplifier covers 10 MHz to 6 GHz, allowing one MMIC to support broadband radio, radar, satellite communication, electronic warfare and test applications.
Is the GNA-63-5W+ a 5W or 6W amplifier?
Mini-Circuits describes it as a 6W-class power amplifier. It produces more than 6W with a +26 dBm input, while typical saturated output power is +38.5 dBm, equivalent to approximately 7W.
What is the difference between P1dB and saturated output power?
The typical P1dB is +33.4 dBm, or approximately 2.2W. The typical saturated output is +38.5 dBm, or approximately 7W. Linear signals generally require operation closer to or below P1dB rather than at saturation.
Can the GNA-63-5W+ operate from a single 28V supply?
No. The drain uses a +28V supply, but the depletion-mode GaN device also requires a negative gate-bias supply. The specified gate-before-drain power sequence must be followed to prevent damage.
Does the GNA-63-5W+ require an external matching network?
The RF input and output are internally matched to 50Ω. External bias components, supply decoupling, grounding and thermal structures are still required on the application PCB.
