CGH40010F 10W DC–6GHz GaN HEMT | Stock, Price & RFQ
The CGH40010F is a 10W RF power gallium nitride high-electron-mobility transistor designed for broadband RF and microwave amplifier applications. Operating from a 28V drain supply, this unmatched GaN HEMT supports frequencies from DC to 6GHz and can be used in both linear and compressed amplifier circuits.
Originally associated with the Cree and Wolfspeed RF product portfolio, the CGH40010F is currently listed by MACOM as part of its GaN RF power transistor range. It is suitable for broadband amplifier designs that require high gain, high efficiency and flexible impedance matching.
CGH40010F Key Specifications
| Parameter | Specification |
| Part number | CGH40010F |
| Product type | RF power GaN HEMT |
| Frequency range | DC to 6GHz |
| Rated output power | 10W |
| Typical saturated output power | 12.5W at 3.7GHz |
| Drain supply voltage | 28V |
| Typical small-signal gain | 14.5dB at 3.7GHz |
| Small-signal gain at 2GHz | 16dB |
| Small-signal gain at 4GHz | 14dB |
| Typical drain efficiency | 65% at saturation |
| Quiescent drain current | 200mA |
| Minimum breakdown voltage | 84V |
| Maximum recommended drain current | 1.5A |
| Thermal resistance | 8°C/W junction-to-case |
| Case operating temperature | −40°C to +150°C |
| Package | 440166 screw-down flange |
Typical CGH40010F Applications
The wide operating bandwidth of the CGH40010F makes it suitable for a variety of RF power amplifier systems, including:
Broadband RF power amplifiers
Two-way private radio equipment
Cellular infrastructure
RF test and measurement instruments
Software-defined radio systems
Driver-stage amplifiers
Industrial RF equipment
Class A and Class AB amplifiers
OFDM power amplifiers
W-CDMA, EDGE and CDMA systems
The final amplifier performance depends on the selected operating frequency, bias conditions, matching network, PCB material and thermal design.
CGH40010F Stock and Price
The CGH40010F price depends on order quantity, date code, packaging, delivery location and current supplier availability. Stock levels can also change frequently, so customers should request a current quotation before placing an order.
For an accurate CGH40010F quote, please provide:
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Frequently Asked Questions
What is the frequency range of the CGH40010F?
The CGH40010F operates from DC to 6GHz, allowing it to be used in broadband RF and microwave amplifier designs.
What is the output power of the CGH40010F?
The device is rated as a 10W RF power GaN HEMT. Under the specified 3.7GHz test conditions, its typical saturated output power is approximately 12.5W.
What is the difference between CGH40010F and CGH40010P?
The main difference is the package. The CGH40010F uses a screw-down flange package, while the CGH40010P uses a solder-down pill package.
Is the CGH40010F internally matched?
No. The CGH40010F is an unmatched GaN HEMT, so an external input and output matching network is required for the selected operating frequency.
