MACOM CGH25120F 120W 2.3–2.7GHz GaN HEMT RF Transistor

MACOM CGH25120F 120W 2.3–2.7GHz GaN HEMT RF Transistor

The MACOM CGH25120F is a 120W-class GaN high electron mobility transistor (HEMT) designed for 2.3–2.7GHz RF power amplifiers. Operating with a 28V drain supply, it offers high gain and efficiency for WiMAX, LTE and broadband wireless amplifier applications.

The device delivers 130W typical pulsed saturated output power at 2.5GHz under specified test conditions. It is supplied in a ceramic/metal flange package and requires appropriate RF matching, gate bias control and thermal management.

CGH25120F Key Specifications

Note: The 130W typical saturated output power is measured at 2.5GHz, VDD = 28V and IDQ = 0.5A, using 40µs pulses at 5% duty cycle. It is not a guaranteed continuous-wave output rating.

RF Power, Bias and Matching Design

The CGH25120F requires carefully designed input and output matching networks to achieve the desired gain, efficiency and linearity across 2.3–2.7GHz.

Engineers should verify the following requirements:

• Drain bias: The manufacturer's RF performance data uses a 28V drain supply and 500mA quiescent drain current.

• Gate bias: The typical quiescent gate voltage is −2.7V. Gate voltage must be adjusted to establish the required drain current rather than fixed solely by its typical value.

• RF matching: Use the manufacturer's reference amplifier circuit, matching information and S-parameter models when designing the PCB.

• Output power: Distinguish pulsed saturated power from average power under modulated signals.

• Thermal management: Provide suitable flange mounting, heat sinking and thermal interfaces to maintain safe junction temperature.

MACOM provides device models and demonstration amplifier data to support circuit design. The measured RF results depend on the matching network, bias conditions and signal characteristics.

120W Rating vs Modulated RF Output Power

Although the CGH25120F is classified as a 120W RF power transistor, its usable average output power depends on waveform linearity, thermal limits and the amplifier design.

In MACOM's demonstration amplifier, the device achieves approximately 13dB gain, −32dBc ACLR and 30% drain efficiency at 20W average output power under specified WiMAX modulation conditions.

At 2.5GHz, typical pulsed saturated output power reaches 130W using 40µs pulses and a 5% duty cycle.

Designers should not use the 120W device rating as a substitute for application-specific CW, pulsed or modulated power verification.

Typical Applications

• 2.3–2.7GHz RF power amplifiers

• WiMAX and LTE base station amplifiers

• Broadband wireless access equipment

• Linear RF amplifiers using digital predistortion

• RF power amplifier development and evaluation

Ordering and Package Information

Before ordering, confirm the manufacturer's current product status, package drawing, available quantity and delivery schedule. For existing equipment, verify the original device marking and assembly requirements.

Datasheet and Related GaN RF Products

• MACOM CGH25120F Official Product Page

• CGH25120F Datasheet (PDF)

Explore additional CREE/Wolfspeed and MACOM GaN RF Power Transistors, including CGH21240, CGH27030 and other related models. Frequency range, matching requirements and power ratings vary by device; these parts are not direct replacements.

CGH25120F Pricing and Availability

Looking for MACOM CGH25120F pricing, stock availability, lead time or technical documentation?

Contact DataStorageIC with your required quantity, operating frequency, RF power requirement and delivery destination. Our team can assist with product sourcing, quotation requests and specification confirmation.