AM096540WN-SN-R 0.9–6.5GHz GaN MMIC Power Amplifier
Product Specifications
| Parameter | Specification |
| Product Type | GaN MMIC Power Amplifier |
| Typical Frequency Range | 0.9–6.5GHz |
| Minimum Specified Range | 1.25–6GHz |
| Saturated Output Power | 40.5dBm / approximately 11W |
| Small-Signal Gain | 20dB typical |
| Minimum Gain | 17dB |
| Gain Ripple | ±1.5dB typical |
| Noise Figure | 8dB typical |
| Output IP3 | 43dBm typical |
| Input Return Loss | 10dB typical |
| Output Return Loss | 10dB typical |
| Drain Voltage | +40V |
| Reference Gate Voltage | −2.1V |
| Recommended Total Bias Current | 1,000mA |
| Saturated Efficiency | 15% typical |
| Thermal Resistance | 1.25°C/W |
| RF Impedance | 50Ω |
| Package | Ceramic Flange with Straight Leads |
| Operating Temperature | −55°C to +85°C |
| RoHS Status | RoHS Compliant |
| ECCN | EAR99 |
AM096540WN-SN-R Product Overview
The AM096540WN-SN-R is a broadband gallium nitride MMIC power amplifier covering 0.9GHz to 6.5GHz. It provides approximately 20dB gain and up to 40.5dBm saturated output power, equivalent to about 11W.
The amplifier is supplied in a ceramic flange package with straight RF and DC leads for drop-in assembly. Its RF input and output are internally matched to 50Ω, reducing the external matching work required during module integration.
Key Features
Broadband operation from 0.9GHz to 6.5GHz
Approximately 11W saturated RF output
20dB typical small-signal gain
50Ω matched RF input and output
Ceramic flange package
Straight leads for drop-in assembly
1.25°C/W typical thermal resistance
RoHS-compliant construction
EAR99 export classification
Typical Applications
The AM096540WN-SN-R is designed for:
RF and microwave instrumentation
Commercial telecom transmission equipment
Fixed microwave backhaul
Broadband transmitter modules
Laboratory RF amplifier development
Instrumentation, telecom transmission equipment and fixed microwave backhaul are specifically identified in the AMCOM datasheet.
Thermal and Integration Requirements
The AM096540WN-SN-R dissipates significant DC power and must be installed on an adequate heatsink. AMCOM recommends placing a 4-mil indium shim between the package flange and heatsink to improve thermal contact and RF performance.
Negative gate bias must be established before applying either drain voltage. Applying the +40V drain supplies without the correct negative gate voltages can cause excessive current, overheating and permanent device damage.
The package has separate RF, drain and gate leads and is intended for integration into a controlled microwave PCB or carrier assembly. The manufacturer’s reference test circuit should be reviewed when designing the bias networks and RF transitions.
Frequently Asked Questions
How much RF power does the AM096540WN-SN-R provide?
The typical saturated output power is 40.5dBm, equivalent to approximately 11W. The datasheet lists 39.5dBm typical output with 24dBm input and 40.5dBm typical output with 27dBm input.
What frequency range does the amplifier cover?
The typical operating range is 0.9–6.5GHz. The datasheet specifies 1.25–6GHz as the minimum performance range.
What supply voltage is required?
The device uses two +40V drain connections. Its two gate voltages are approximately −2.1V under the reference test conditions, with a recommended combined quiescent current of 1,000mA.
Is external RF matching required?
The AM096540WN-SN-R is internally matched to 50Ω at the RF input and output. PCB transitions and lead connections must still be designed carefully for broadband operation.
Does the amplifier require a heatsink?
Yes. Good heat sinking is required because of the device’s high DC power dissipation. AMCOM recommends an indium shim between the flange and heatsink.
Is this a complete connectorised amplifier module?
No. It is a packaged GaN MMIC with straight RF and DC leads. It requires a suitable carrier, bias circuitry, RF transitions and thermal management before use in a complete amplifier system.
AM096540WN-SN-R Price and Availability
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