UMS X-Band HPA Selection | CHA8212, CHA8612 & CHA8710
The CHA8212-99F, CHA8612-QDB and CHA8710-QDB are UMS GaN high-power amplifiers for X-Band radar, defense and microwave communication systems.
The CHA8212-99F offers high gain and wide frequency coverage in bare-die form. The CHA8612-QDB extends operation down to 7.9GHz in a surface-mount package, while the CHA8710-QDB provides a packaged 25W solution for systems operating mainly between 8.5GHz and 10.5GHz.
Specification Comparison
| Parameter | CHA8212-99F | CHA8612-QDB | CHA8710-QDB |
| Frequency Range | 8.5–11.5GHz | 7.9–11GHz | 8.5–10.5GHz |
| Published Output Rating | 25W / 44dBm | 18W | 25W |
| Linear Gain | 34dB | 26dB | 29.5dB |
| Power Added Efficiency | 36% | 40% | 41% |
| Drain Voltage | 28V | 30V | 30V |
| Quiescent Drain Current | 840mA | 680mA | 750mA |
| Amplifier Stages | Three | Two | Two |
| Technology | 0.25µm GaN HEMT | 0.25µm GaN HEMT | GaN HEMT |
| Product Form | Bare Die | 46-lead QFN | 46-lead QFN |
| Size | 5.63 × 4.23 × 0.1mm die | 7 × 7mm package | 7 × 7mm package |
| Moisture Sensitivity | Not applicable to bare die | MSL3 | Check current datasheet |
Which UMS X-Band HPA Should You Choose?
Choose CHA8212-99F for Wide Coverage and High Gain
The CHA8212-99F reaches the highest upper frequency of the three models and provides the highest small-signal gain. It is suitable for custom microwave modules where bare-die assembly is available and minimizing the required driver power is important.
Its 8.5–11.5GHz range also makes it the most suitable option when the design must operate above 11GHz.
Choose CHA8612-QDB for Broad Packaged Operation
The CHA8612-QDB starts at 7.9GHz, giving it the best low-frequency coverage. Its 7 × 7mm surface-mount QFN package avoids bare-die attachment and wire-bonding requirements.
This model is a practical choice for broadband radar, communication and instrumentation systems that require packaged GaN power amplification but do not need the full 25W output level.
Choose CHA8710-QDB for Packaged 25W Output
The CHA8710-QDB combines a 25W rating with a 7 × 7mm QFN package. It is intended for designs where higher per-channel output is required without using a bare-die amplifier.
Its narrower frequency range should be acceptable for many radar and communication systems centred around the main X-Band region.
Typical Applications
X-Band radar transmitters
Military and aerospace RF systems
Commercial radar equipment
Point-to-point microwave communications
Phased-array transmit modules
RF test and instrumentation systems
The CHA8212-99F is primarily positioned for defense and high-performance microwave systems, while UMS identifies military and commercial radar and communications as target applications for the two packaged models.
Frequently Asked Questions
1. What is the main difference between CHA8212-99F and CHA8710-QDB?
Both are rated at approximately 25W, but the CHA8212-99F is a higher-gain bare die with wider frequency coverage. The CHA8710-QDB is a packaged device intended for surface-mount assembly.
2. Which model covers frequencies below 8.5GHz?
The CHA8612-QDB operates down to 7.9GHz. The other two models begin at 8.5GHz.
3. Which model requires the lowest driver power?
The CHA8212-99F generally requires less input drive because it provides the highest published linear gain of the three models.
4. Are CHA8612-QDB and CHA8710-QDB drop-in replacements?
They both use 46-lead 7 × 7mm QFN packages, but they should not automatically be treated as drop-in replacements. Bias, RF performance, pin assignments and thermal requirements must be checked in both datasheets.
5. Which model is better for a conventional PCB design?
The CHA8612-QDB and CHA8710-QDB are generally easier to integrate into a PCB-based design because they use surface-mount QFN packages. The CHA8212-99F requires bare-die mounting and wire bonding.
