Home > technical > CHA8265-98F vs CHA8362-99F vs CHA8282-99F | Ka-Band HPA

CHA8265-98F vs CHA8362-99F vs CHA8282-99F | Ka-Band HPA

2026-08-03 10:52:09 Data Storage Technology Limited View times 18

The UMS CHA8265-98F, CHA8362-99F and CHA8282-99F are three-stage GaN-on-SiC high-power amplifiers for Ka-Band transmit systems.

The CHA8265-98F and CHA8362-99F provide approximately 25W saturated output power, while the CHA8282-99F offers a lower-power 10W solution with a smaller die and higher typical gain. All three are supplied as bare dies for Satcom, VSAT, 5G and millimeter-wave transmitter modules.

UMS CHA8265-98F, CHA8362-99F and CHA8282-99F Ka-Band GaN amplifiers

Specification Comparison

ParameterCHA8265-98FCHA8362-99FCHA8282-99F
Frequency Range27.5–31GHz26.5–31GHz27.5–31GHz
Saturated Output Power44dBm, approximately 25W44dBm, approximately 25W40dBm, approximately 10W
Linear Gain25dB25dB27dB
Power Added Efficiency30%30%33%
Published Linear Performance−30dBc ACPR at 40dBm average output, 256QAM/100MHz−33dBc ACPR at 40dBm average output, 256QAM/100MHz−30dBc ACPR at 36dBm output, 8PSK/100MHz
Drain Voltage25V typical; 18–25V range25V typical22V typical
Quiescent Drain Current340mA440mA300mA
TechnologyGaN-on-SiC HEMTGaN-on-SiC HEMTGaN-on-SiC HEMT
Product FormBare DieBare DieBare Die
Die Size3.6 × 3.6mm3.6 × 3.6mm3.0 × 2.61mm

Which Model Should You Choose?

Choose CHA8265-98F for Flexible 15W to 25W Operation

The CHA8265-98F is suitable when the required output power may vary between different transmitter versions. Its supported drain-voltage range allows the saturated output to be adjusted from approximately 15W to 25W.

Compared with the CHA8362-99F, it provides the same nominal maximum output and gain with a lower typical quiescent current.

Choose CHA8362-99F for Wider Low-Frequency Coverage

The CHA8362-99F extends operation down to 26.5GHz, making it the appropriate choice when the transmitter must cover frequencies below 27.5GHz.

It also has published 256QAM performance of −33dBc ACPR at 40dBm average output, making it relevant to high-power Ka-Band communication transmitters where documented modulated-signal performance is important.

Choose CHA8282-99F for a Compact 10W Transmitter

The CHA8282-99F is intended for systems that do not require 25W from one MMIC. It offers higher typical gain, slightly higher saturated PAE and a smaller die than the two 25W models.

This can make it more suitable for compact terminals, lower-power transmitter channels and phased arrays where power and die area must be controlled across many elements.

Typical Applications

Ka-Band satellite communication uplinks

VSAT and user-terminal transmitters

5G millimeter-wave infrastructure

Active phased-array transmit modules

Point-to-point microwave radio

Ka-Band solid-state power amplifiers

The CHA8265-98F and CHA8362-99F target higher-power transmit stages, while the CHA8282-99F is better suited to systems requiring approximately 10W per channel.

Price and RFQ

For an RFQ, specify the complete UMS part number, required quantity, target delivery date and any lot, date-code or traceability requirements.

Frequently Asked Questions

1. What is the main difference between the three models?

The CHA8265-98F and CHA8362-99F are 25W amplifiers, while the CHA8282-99F provides approximately 10W with a smaller die and lower typical bias requirements.

2. Which model covers 26.5GHz?

Only the CHA8362-99F is specified down to 26.5GHz. The CHA8265-98F and CHA8282-99F begin at 27.5GHz.

3. Are CHA8265-98F and CHA8362-99F equivalent?

No. Although both provide approximately 25W and 25dB gain, they differ in frequency coverage, quiescent current, linearity characterization and supported operating conditions.

4. Which model is best for lower-power phased-array channels?

The CHA8282-99F is generally the better starting point when approximately 10W is sufficient and smaller die size, higher gain and lower DC demand are priorities.

5. Can the three amplifiers be used as drop-in replacements?

No. Their die dimensions, pad layouts, bias conditions and RF drive requirements differ. A module redesign and performance review are required when changing models.

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