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HMC414MS8GE 2.2–2.8GHz Power Amplifier

2026-09-01 15:35:30 DataStorage View times 2
HMC414MS8GE 2.2–2.8GHz Power Amplifier
Mfr. Part #: HMC414MS8GE / HMC414MS8GETR

Manufacturer: Analog Devices / Hittite Microwave

Product Type: InGaP HBT MMIC Power Amplifier

Frequency Range: 2.2GHz to 2.8GHz
Package: 8-Lead MSOP with Exposed Pad
Description: 2.2–2.8GHz InGaP HBT MMIC power amplifier with 20dB gain, +30dBm saturated output power, 32% PAE and power-down control for Bluetooth, MMDS and legacy wireless equipment.
RFQ

The HMC414MS8GE is a surface-mount power amplifier designed for RF transmitter systems operating between 2.2GHz and 2.8GHz. It uses InGaP heterojunction bipolar transistor technology and provides high gain and approximately 1W of saturated RF output power from a compact 8-lead package.

The exposed pad improves the RF ground and thermal path, while the integrated amplifier architecture limits the number of external components required. A dedicated VPD pin supports complete power-down as well as RF output-power and current control.

Technical Specifications

ParameterSpecification
Frequency Range2.2GHz to 2.8GHz
TechnologyGaAs InGaP HBT MMIC
Amplifier TypeRF Power Amplifier
Small-Signal Gain20dB Typical
Saturated Output Power+30dBm Typical
Power-Added Efficiency32% Typical at +5V
Supply Voltage Range+2.75V to +5V
Nominal Supply Voltage+5V
Alternative OperationSupports operation from a 3.6V supply
Power ControlVPD Power-Down and Output-Power Control
Package8-Lead MSOP with Exposed Pad
Ordering CodesHMC414MS8GE, HMC414MS8GETR
LifecycleNot Recommended for New Designs
Product NoticeIncluded in PDN 25_0079

Typical Applications

Bluetooth Transmitters

HMC414MS8GE can be used as a power-amplifier stage in legacy Bluetooth and 2.4GHz wireless transmitter designs requiring higher RF output power than a transceiver can provide directly.

MMDS Equipment

The operating range supports multichannel multipoint distribution service equipment and related broadband wireless transmitters operating in the 2.5GHz region.

Legacy Wireless Infrastructure

The amplifier may still be required for the repair, maintenance and continued production of established wireless equipment whose RF circuit and PCB layout have already been qualified.

Existing RF Modules

HMC414MS8GE is relevant when an existing RF module specifies the original MSOP package, VPD control method and InGaP HBT amplifier architecture. A redesign may be necessary if the original part is no longer available.

Lifecycle and Replacement Considerations

Analog Devices currently classifies HMC414 as not recommended for new designs. HMC414MS8GE and HMC414MS8GETR are also included in PDN 25_0079 concerning obsolescence of the associated manufacturing process.

For existing equipment, sourcing the original part may avoid PCB, matching-network and control-circuit changes. Stock, date code and traceability should be confirmed before ordering.

There is no universal drop-in replacement that should be selected from frequency and output power alone. A replacement assessment must compare:

  • Frequency coverage

  • Gain and saturated output power

  • PAE and supply current

  • Supply-voltage range

  • VPD control behavior

  • Input and output matching

  • Package dimensions and pinout

  • Exposed-pad and thermal requirements

  • Stability and harmonic performance

For new designs, a currently supported RF power amplifier should generally be selected instead of HMC414MS8GE.

Stock and Lead Time

DataStorageIC supports quotations for HMC414MS8GE and HMC414MS8GETR for existing equipment, repair programs and legacy production requirements. Stock quantity, date code, lot information, packaging condition and lead time are confirmed at the time of quotation.

Availability may be limited because the device is not recommended for new designs and is covered by an obsolescence notice. Submit the complete part number, quantity and acceptable date-code range through the RFQ form to receive current stock and pricing information.

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