HMC414MS8GE 2.2–2.8GHz Power Amplifier
Manufacturer: Analog Devices / Hittite Microwave
Product Type: InGaP HBT MMIC Power Amplifier
Frequency Range: 2.2GHz to 2.8GHzPackage: 8-Lead MSOP with Exposed Pad
Description: 2.2–2.8GHz InGaP HBT MMIC power amplifier with 20dB gain, +30dBm saturated output power, 32% PAE and power-down control for Bluetooth, MMDS and legacy wireless equipment.
The HMC414MS8GE is a surface-mount power amplifier designed for RF transmitter systems operating between 2.2GHz and 2.8GHz. It uses InGaP heterojunction bipolar transistor technology and provides high gain and approximately 1W of saturated RF output power from a compact 8-lead package.
The exposed pad improves the RF ground and thermal path, while the integrated amplifier architecture limits the number of external components required. A dedicated VPD pin supports complete power-down as well as RF output-power and current control.
Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 2.2GHz to 2.8GHz |
| Technology | GaAs InGaP HBT MMIC |
| Amplifier Type | RF Power Amplifier |
| Small-Signal Gain | 20dB Typical |
| Saturated Output Power | +30dBm Typical |
| Power-Added Efficiency | 32% Typical at +5V |
| Supply Voltage Range | +2.75V to +5V |
| Nominal Supply Voltage | +5V |
| Alternative Operation | Supports operation from a 3.6V supply |
| Power Control | VPD Power-Down and Output-Power Control |
| Package | 8-Lead MSOP with Exposed Pad |
| Ordering Codes | HMC414MS8GE, HMC414MS8GETR |
| Lifecycle | Not Recommended for New Designs |
| Product Notice | Included in PDN 25_0079 |
Typical Applications
Bluetooth Transmitters
HMC414MS8GE can be used as a power-amplifier stage in legacy Bluetooth and 2.4GHz wireless transmitter designs requiring higher RF output power than a transceiver can provide directly.
MMDS Equipment
The operating range supports multichannel multipoint distribution service equipment and related broadband wireless transmitters operating in the 2.5GHz region.
Legacy Wireless Infrastructure
The amplifier may still be required for the repair, maintenance and continued production of established wireless equipment whose RF circuit and PCB layout have already been qualified.
Existing RF Modules
HMC414MS8GE is relevant when an existing RF module specifies the original MSOP package, VPD control method and InGaP HBT amplifier architecture. A redesign may be necessary if the original part is no longer available.
Lifecycle and Replacement Considerations
Analog Devices currently classifies HMC414 as not recommended for new designs. HMC414MS8GE and HMC414MS8GETR are also included in PDN 25_0079 concerning obsolescence of the associated manufacturing process.
For existing equipment, sourcing the original part may avoid PCB, matching-network and control-circuit changes. Stock, date code and traceability should be confirmed before ordering.
There is no universal drop-in replacement that should be selected from frequency and output power alone. A replacement assessment must compare:
Frequency coverage
Gain and saturated output power
PAE and supply current
Supply-voltage range
VPD control behavior
Input and output matching
Package dimensions and pinout
Exposed-pad and thermal requirements
Stability and harmonic performance
For new designs, a currently supported RF power amplifier should generally be selected instead of HMC414MS8GE.
Stock and Lead Time
DataStorageIC supports quotations for HMC414MS8GE and HMC414MS8GETR for existing equipment, repair programs and legacy production requirements. Stock quantity, date code, lot information, packaging condition and lead time are confirmed at the time of quotation.
Availability may be limited because the device is not recommended for new designs and is covered by an obsolescence notice. Submit the complete part number, quantity and acceptable date-code range through the RFQ form to receive current stock and pricing information.



