Ampleon BLP9G0722-20G 20W LDMOS RF Transistor
Mfr. Part #:BLP9G0722-20G
Complete Ordering P/N:BLP9G0722-20GZ
Manufacturer:Ampleon
Product Category:RF & Microwave / RF Power Transistors
Technology:LDMOS
Frequency Range:100–2700MHz
Nominal RF Power:20W at 3dB gain compression
Drain Voltage:28V, RF test condition
Package:TO-270 / SOT1483-1
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Get Price & AvailabilityAmpleon BLP9G0722-20G 20W LDMOS RF Transistor
The Ampleon BLP9G0722-20G is a 20W-class LDMOS RF power transistor designed for broadband wireless infrastructure and RF driver applications from 100MHz to 2700MHz. Operating with a 28V drain supply under specified RF test conditions, it provides high power gain, good efficiency and integrated ESD protection.
At 1805–1880MHz, the device delivers 19dB typical gain and 21% drain efficiency at 35dBm average W-CDMA output power. The BLP9G0722-20G is supplied in a TO-270 gull-wing package, with BLP9G0722-20GZ as the complete orderable part number.
BLP9G0722-20G Key Specifications
| Parameter | Specification |
|---|---|
| Manufacturer | Ampleon |
| Part Number | BLP9G0722-20G |
| Orderable Part Number | BLP9G0722-20GZ |
| Device Type | LDMOS RF Power Transistor |
| Frequency Range | 100–2700MHz |
| Nominal RF Power | 20W at 3dB Gain Compression |
| Drain Voltage (RF Test) | 28V |
| Quiescent Drain Current | 180mA |
| Quiescent Gate Voltage | 2.1V Typical |
| Typical Power Gain | 19dB at 1805–1880MHz |
| Typical Drain Efficiency | 21% at 1805–1880MHz, W-CDMA |
| Average Modulated Output Power | 35dBm under specified W-CDMA conditions |
| ACPR at 5MHz Offset | −45dBc under specified conditions |
| Typical P1dB | 43.9dBm at 1842.5MHz, Pulsed CW |
| Typical P3dB | 44.3dBm at 1842.5MHz, Pulsed CW |
| Drain-Source Breakdown Voltage | 65V Minimum |
| Thermal Resistance (Junction–Case) | 1.1K/W Typical, Specified Conditions |
| Package | TO-270 / SOT1483-1 |
| Mounting Type | Surface Mount |
| Product Status | Active |
Note: The 19dB gain and 21% efficiency values are based on the manufacturer's specified 1805–1880MHz W-CDMA application conditions. Performance changes with frequency, output power, bias and matching network.
28V Bias and RF Power Design
The BLP9G0722-20G uses a nominal 28V drain supply and a quiescent drain current of 180mA in the manufacturer's RF characterization circuits.
The typical gate voltage is approximately 2.1V at the specified quiescent operating point, but actual gate bias must be adjusted to establish the required drain current.
Engineers should verify:
Bias sequencing: Establish the required gate bias before enabling the drain supply and follow the manufacturer's recommended startup procedure.
RF power: Distinguish 20W nominal compression power from linear average output power under modulated signals.
Gain: Verify gain across the target operating band using the appropriate matching network.
Linearity: Evaluate ACPR and gain compression at the required signal bandwidth and output level.
Thermal design: Provide an adequate thermal path from the transistor package to the PCB or heatsink.
RF Matching and Load-Pull Considerations
The BLP9G0722-20G requires external input and output matching networks. It should not be treated as a complete 50Ω matched RF amplifier module.
Ampleon provides load-pull impedance data, demonstration PCB information and simulation models for RF circuit development.
For example, the manufacturer's maximum-power load-pull data at 1840MHz gives a typical source impedance of 1.3 − j5.8Ω and a load impedance of 3.0 − j1.2Ω under the specified 28V and 180mA bias conditions.
These are device-plane matching targets under defined test conditions, not direct 50Ω port specifications. Engineers should use the appropriate matching and reference-plane definitions when designing the amplifier.
BLP9G0722-20G vs BLP9G0722-20
Ampleon has discontinued the earlier BLP9G0722-20 and identifies the BLP9G0722-20G as its replacement.
| Parameter | BLP9G0722-20 | BLP9G0722-20G |
|---|---|---|
| Product Status | Discontinued | Active |
| Frequency Range | 100–2700MHz | 100–2700MHz |
| Nominal RF Power | 20W | 20W |
| Package Outline | SOT1482-1 | SOT1483-1 |
| Orderable Number | BLP9G0722-20Z | BLP9G0722-20GZ |
| Manufacturer Replacement Status | Older version | Recommended successor |
Before replacing the discontinued version, compare the latest mechanical drawings, lead geometry, PCB footprint, grounding and RF matching requirements.
The manufacturer's replacement recommendation does not eliminate the need for application-specific compatibility verification.
Typical Applications
FDD/TDD LTE RF amplifier drivers
GSM EDGE and W-CDMA infrastructure
CDMA and multi-carrier RF systems
WiMAX amplifier stages
Broadband RF driver amplifier development
Ordering and Product Information
| Item | Information |
|---|---|
| Base Part Number | BLP9G0722-20G |
| Complete Ordering Number | BLP9G0722-20GZ |
| Manufacturer Ordering Code | 934960092515 |
| Package | TO-270 / SOT1483-1 |
| Packaging | 13-inch Reel, Drypack |
| Manufacturer | Ampleon |
| Lifecycle Status | Active |
For procurement, verify the complete ordering number, required quantity, packaging, lot traceability and current delivery schedule.
Datasheet and Related RF Transistors
For other RF power requirements, explore Ampleon RF Power Transistors at DataStorageIC.
For higher-power industrial RF applications around 2GHz, see the Ampleon BLF20M10LS200P 200W LDMOS Transistor. This device operates under different electrical and RF conditions and is not a direct replacement.
BLP9G0722-20G Pricing and Availability
Looking for Ampleon BLP9G0722-20GZ pricing, stock availability, lead time or technical documentation?
Contact DataStorageIC with your required quantity, target operating frequency, RF power requirement and delivery destination. Our team can assist with sourcing, quotation requests and specification confirmation.



