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Ampleon BLP9G0722-20G 20W LDMOS RF Transistor

2026-11-02 09:47:58 DataStorage View times 9
Ampleon BLP9G0722-20G 20W LDMOS RF Transistor

Mfr. Part #:BLP9G0722-20G

Complete Ordering P/N:BLP9G0722-20GZ

Manufacturer:Ampleon

Product Category:RF & Microwave / RF Power Transistors

Technology:LDMOS

Frequency Range:100–2700MHz

Nominal RF Power:20W at 3dB gain compression

Drain Voltage:28V, RF test condition

Package:TO-270 / SOT1483-1


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Ampleon BLP9G0722-20G 20W LDMOS RF Transistor

The Ampleon BLP9G0722-20G is a 20W-class LDMOS RF power transistor designed for broadband wireless infrastructure and RF driver applications from 100MHz to 2700MHz. Operating with a 28V drain supply under specified RF test conditions, it provides high power gain, good efficiency and integrated ESD protection.

At 1805–1880MHz, the device delivers 19dB typical gain and 21% drain efficiency at 35dBm average W-CDMA output power. The BLP9G0722-20G is supplied in a TO-270 gull-wing package, with BLP9G0722-20GZ as the complete orderable part number.

BLP9G0722-20G Key Specifications

ParameterSpecification
ManufacturerAmpleon
Part NumberBLP9G0722-20G
Orderable Part NumberBLP9G0722-20GZ
Device TypeLDMOS RF Power Transistor
Frequency Range100–2700MHz
Nominal RF Power20W at 3dB Gain Compression
Drain Voltage (RF Test)28V
Quiescent Drain Current180mA
Quiescent Gate Voltage2.1V Typical
Typical Power Gain19dB at 1805–1880MHz
Typical Drain Efficiency21% at 1805–1880MHz, W-CDMA
Average Modulated Output Power35dBm under specified W-CDMA conditions
ACPR at 5MHz Offset−45dBc under specified conditions
Typical P1dB43.9dBm at 1842.5MHz, Pulsed CW
Typical P3dB44.3dBm at 1842.5MHz, Pulsed CW
Drain-Source Breakdown Voltage65V Minimum
Thermal Resistance (Junction–Case)1.1K/W Typical, Specified Conditions
PackageTO-270 / SOT1483-1
Mounting TypeSurface Mount
Product StatusActive

Note: The 19dB gain and 21% efficiency values are based on the manufacturer's specified 1805–1880MHz W-CDMA application conditions. Performance changes with frequency, output power, bias and matching network.

28V Bias and RF Power Design

The BLP9G0722-20G uses a nominal 28V drain supply and a quiescent drain current of 180mA in the manufacturer's RF characterization circuits.

The typical gate voltage is approximately 2.1V at the specified quiescent operating point, but actual gate bias must be adjusted to establish the required drain current.

Engineers should verify:

  • Bias sequencing: Establish the required gate bias before enabling the drain supply and follow the manufacturer's recommended startup procedure.

  • RF power: Distinguish 20W nominal compression power from linear average output power under modulated signals.

  • Gain: Verify gain across the target operating band using the appropriate matching network.

  • Linearity: Evaluate ACPR and gain compression at the required signal bandwidth and output level.

  • Thermal design: Provide an adequate thermal path from the transistor package to the PCB or heatsink.

RF Matching and Load-Pull Considerations

The BLP9G0722-20G requires external input and output matching networks. It should not be treated as a complete 50Ω matched RF amplifier module.

Ampleon provides load-pull impedance data, demonstration PCB information and simulation models for RF circuit development.

For example, the manufacturer's maximum-power load-pull data at 1840MHz gives a typical source impedance of 1.3 − j5.8Ω and a load impedance of 3.0 − j1.2Ω under the specified 28V and 180mA bias conditions.

These are device-plane matching targets under defined test conditions, not direct 50Ω port specifications. Engineers should use the appropriate matching and reference-plane definitions when designing the amplifier.

BLP9G0722-20G vs BLP9G0722-20

Ampleon has discontinued the earlier BLP9G0722-20 and identifies the BLP9G0722-20G as its replacement.

ParameterBLP9G0722-20BLP9G0722-20G
Product StatusDiscontinuedActive
Frequency Range100–2700MHz100–2700MHz
Nominal RF Power20W20W
Package OutlineSOT1482-1SOT1483-1
Orderable NumberBLP9G0722-20ZBLP9G0722-20GZ
Manufacturer Replacement StatusOlder versionRecommended successor

Before replacing the discontinued version, compare the latest mechanical drawings, lead geometry, PCB footprint, grounding and RF matching requirements.

The manufacturer's replacement recommendation does not eliminate the need for application-specific compatibility verification.

Typical Applications

  • FDD/TDD LTE RF amplifier drivers

  • GSM EDGE and W-CDMA infrastructure

  • CDMA and multi-carrier RF systems

  • WiMAX amplifier stages

  • Broadband RF driver amplifier development

Ordering and Product Information

ItemInformation
Base Part NumberBLP9G0722-20G
Complete Ordering NumberBLP9G0722-20GZ
Manufacturer Ordering Code934960092515
PackageTO-270 / SOT1483-1
Packaging13-inch Reel, Drypack
ManufacturerAmpleon
Lifecycle StatusActive

For procurement, verify the complete ordering number, required quantity, packaging, lot traceability and current delivery schedule.

Datasheet and Related RF Transistors

For other RF power requirements, explore Ampleon RF Power Transistors at DataStorageIC.

For higher-power industrial RF applications around 2GHz, see the Ampleon BLF20M10LS200P 200W LDMOS Transistor. This device operates under different electrical and RF conditions and is not a direct replacement.

BLP9G0722-20G Pricing and Availability

Looking for Ampleon BLP9G0722-20GZ pricing, stock availability, lead time or technical documentation?

Contact DataStorageIC with your required quantity, target operating frequency, RF power requirement and delivery destination. Our team can assist with sourcing, quotation requests and specification confirmation.

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