EC2612-99F 40GHz Super Low Noise GaAs pHEMT Transistor
Manufacturer： UMS / United Monolithic Semiconductors
Product Type： GaAs pHEMT Transistor
Frequency Range： DC–40 GHz
Package/Case： Die
Product Description
The UMS EC2612-99F is a super-low-noise GaAs pHEMT transistor designed for microwave and millimeter-wave receiver front ends up to 40 GHz. It provides 9.5 dB associated gain and a 1.5 dB minimum noise figure at 40 GHz.
Manufactured using UMS 0.15 µm pseudomorphic HEMT technology, the device combines low gate resistance, high transconductance and broadband low-noise performance. It is supplied as a compact bare Die with backside source via connections, requiring bond wires only for the gate and drain.
EC2612-99F Specifications
| Parameter | Value |
| Frequency Range | DC–40 GHz |
| Associated Gain at 18 GHz | 12 dB |
| Associated Gain at 40 GHz | 9.5 dB |
| Minimum Noise Figure at 18 GHz | 0.8 dB |
| Minimum Noise Figure at 40 GHz | 1.5 dB |
| Process Technology | 0.15 µm GaAs pHEMT |
| Gate Width | 120 µm |
| Typical Saturated Drain Current | 35 mA |
| Recommended Drain Voltage | Up to 3.5 V |
| Die Size | 0.63 × 0.37 × 0.10 mm |
| Package | Bare Die |
Features and Applications
The EC2612-99F offers low-noise operation across a wide microwave bandwidth, with compact chip dimensions suitable for hybrid microwave modules and custom MMIC assemblies.
Typical design uses include:
Microwave and millimeter-wave low-noise amplifiers
Radar receiver front ends
Satellite communication receivers
Point-to-point microwave links
RF test and measurement equipment
Broadband receiver modules up to 40 GHz
Frequently Asked Questions
Q1: What frequency range does the EC2612-99F support?
The EC2612-99F operates from DC to 40 GHz, covering microwave bands including X-, Ku-, K- and Ka-band.
Q2: What is the noise figure at 40 GHz?
UMS specifies a minimum noise figure of 1.5 dB at 40 GHz under the stated datasheet test conditions.
Q3: What gain does the EC2612-99F provide?
The device provides 12 dB associated gain at 18 GHz and 9.5 dB at 40 GHz.
Q4: Is the EC2612-99F a packaged transistor?
No. It is supplied as a bare Die measuring approximately 0.63 × 0.37 × 0.10 mm.
Q5: What technology is used in the EC2612-99F?
The transistor is manufactured using a 0.15 µm GaAs pseudomorphic high-electron-mobility transistor process with a T-shaped aluminium gate.
