UMS GaN Power Transistors | CHK & CHKA Series RFQ
Mfr. Part #：
CHK015AaQIA / CHK5010-99F / CHK8013-99F / CHK8015-99F / CHK8101-SYC / CHK8101a99F / CHK8201-SYA / CHK9013-99F / CHK9014-99F / CHKA011aSXA / CHKA012a99F
Manufacturer：
UMS / United Monolithic Semiconductors
Technology：
GaN HEMT on SiC
Package/Case：
Die, QFN, Ceramic Metal Flange, Hermetic Ceramic Metal Flange
UMS CHK and CHKA series GaN power transistors provide broadband RF power solutions for frequencies up to 18 GHz. The portfolio includes low- and high-power bare die, power bars and packaged transistors, with saturated output power ranging from 4 W to 140 W.
These GaN-on-SiC devices are intended for RF power amplifier designs used in radar, telecommunications, aerospace, defense and test equipment. Most models are unmatched devices, allowing designers to develop application-specific input and output matching networks.
UMS GaN Power Transistor Selection
| Part Number | Description | Operating Frequency | Linear Gain | PAE | Saturated Power | Bias | Package |
| CHK015AaQIA | 15W Packaged Transistor | Up to 4 GHz | 18 dB @ 2.9 GHz | 55% @ 2.9 GHz | 20 W | 100 mA, 50 V | QFN |
| CHK5010-99F | 4W Power Transistor | Up to 12 GHz | 21.6 dB @ 6 GHz | 72% @ 6 GHz | 4 W | 50 mA, 30 V | Die |
| CHK8013-99F | 14W Power Transistor | Up to 10 GHz | 17 dB @ 6 GHz | 70% @ 6 GHz | 14 W | 180 mA, 30 V | Die |
| CHK8015-99F | 16W Power Transistor | Up to 18 GHz | 17 dB @ 9 GHz | 50% @ 15 GHz | 20 W | 200 mA, 30 V | Die |
| CHK8101-SYC | 15W Packaged Transistor | Up to 6 GHz | 19 dB @ 1.3 GHz | 65% @ 1.3 GHz | 15 W | 100 mA, 50 V | Hermetic Ceramic Metal Flange |
| CHK8101a99F | 20W Power Bar | Up to 6 GHz | 14 dB @ 6 GHz | 60% @ 6 GHz | 20 W | 100 mA, 50 V | Die |
| CHK8201-SYA | 45W Packaged Power Bar | Up to 4 GHz | 22 dB @ 1.3 GHz | 55% @ 1.3 GHz | 45 W | 200 mA, 50 V | Hermetic Ceramic Metal Flange |
| CHK9013-99F | 85W Power Transistor | Up to 8 GHz | 18 dB @ 6 GHz | 65% @ 6 GHz | 88 W | 1100 mA, 30 V | Die |
| CHK9014-99F | 55W Power Transistor | Up to 13 GHz | 13 dB @ 12 GHz | 50% @ 12 GHz | 60 W | 700 mA, 30 V | Die |
| CHKA011aSXA | 130W Packaged Transistor | Up to 1.5 GHz | 23.5 dB @ 0.44 GHz | 75% @ 0.5 GHz | 130 W | 640 mA, 50 V | Ceramic Metal Flange |
| CHKA012a99F | 140W Power Bar | Up to 4 GHz | 19 dB @ 3 GHz | 76% @ 3 GHz | 140 W | 650 mA, 50 V | Die |
Selection and Design Notes
The CHK5010-99F, CHK8013-99F and CHK8015-99F are suitable for compact broadband amplifier designs where higher-frequency operation is required. The CHK8015-99F provides the highest operating-frequency capability in this group.
For higher output power, the CHK9013-99F, CHK9014-99F, CHKA011aSXA and CHKA012a99F support medium- and high-power RF amplifier stages. The CHKA011aSXA provides a packaged flange option, while the CHKA012a99F is intended for custom die-level integration.
The CHK015AaQIA, CHK8101-SYC and CHK8201-SYA are packaged alternatives for designs that require simpler mechanical assembly and improved thermal interfacing. The CHK8101-SYC and CHK8201-SYA use ceramic-metal flange packages for demanding RF power modules.
Because these products are generally supplied as unmatched transistors or power bars, the final amplifier performance depends on the external matching network, bias circuit, thermal management and RF layout.
Typical Applications
Radar transmitters and RF front ends
Broadband and multi-band power amplifiers
Aerospace and defense communication systems
Telecommunications infrastructure
RF test and measurement equipment
Hybrid microwave and power amplifier modules
UMS identifies radar, telecommunications, aerospace, defense and instrumentation as principal markets for these GaN power transistor products.
Frequently Asked Questions
Q1: Which model supports the highest operating frequency?
The CHK8015-99F operates up to 18 GHz, making it suitable for broadband microwave amplifier designs requiring the widest frequency capability in this selection.
Q2: Which UMS GaN transistor provides the highest output power?
The CHKA012a99F provides up to 140 W saturated output power in bare-die form. For a packaged solution, the CHKA011aSXA provides 130 W in a ceramic metal flange package.
Q3: What is the difference between CHK8101-SYC and CHK8101a99F?
The CHK8101-SYC is a hermetic flange-packaged transistor, while the CHK8101a99F is supplied as a bare power-bar die for custom module integration.
Q4: Which model is suitable for a compact packaged amplifier below 4 GHz?
The CHK015AaQIA is a QFN-packaged GaN transistor intended for broadband RF power applications and requires an external matching circuit.
Q5: Which models are suitable for high-power operation around C-band?
The CHK9013-99F provides the highest output power among the models operating up to 8 GHz. The CHK8101a99F and CHK8013-99F are lower-power alternatives for custom broadband amplifier designs.
