UMS 1.2–3.4GHz Internally Matched GaN Power Transistors
CHZ015AaQEG / CHZ180AaSEB / CHZ8012-QJA / CHZ9012-QFA
Manufacturer：
UMS / United Monolithic Semiconductors
Product Type：
Internally Matched GaN Power Transistor / GaN High Power Amplifier
Package/Case：
QFN, Ceramic Metal Flange
Product Description
UMS CHZ series devices are matched GaN power solutions for L-band and S-band RF amplifier stages. The portfolio covers 1.2–3.4 GHz, with output power options from 12 W to approximately 200 W and small-signal gain from 16 to 20 dB.
The L-band products use GaN HEMT Quasi-MMIC technology for pulsed radar power stages. The S-band CHZ8012-QJA and CHZ9012-QFA combine a GaN power bar with GaAs input and output matching circuits and provide a fully matched 50 Ω interface.
UMS CHZ Series Selection
| Part Number | Description | Frequency Range | Small-Signal Gain | Output Power | Associated Gain | PAE | DC Bias | Package |
| CHZ015AaQEG | 15W L-Band Driver | 1.2–1.4 GHz | 17.2 dB | 15 W | >14 dB | >55% | VDS 45 V, IDQ 100 mA | QFN |
| CHZ180AaSEB | 180W L-Band HPA | 1.2–1.4 GHz | 20 dB | 200 W | >14 dB | 52% | VDS 45 V, IDQ 1.3 A | Ceramic Metal Flange |
| CHZ8012-QJA | S-Band 12W GaN HPA | 2.6–3.4 GHz | 16.5 dB | 12 W | 11 dB | 55% | VDS 30 V, IDQ 180 mA | QFN |
| CHZ9012-QFA | S-Band 60W GaN HPA | 2.7–3.4 GHz | 16 dB | 65 W | 12 dB | 55% | VDS 30 V, IDQ 800 mA | QFN |
Features and Applications
The CHZ015AaQEG is an input-matched L-band driver suited to pulsed radar and intermediate power stages. Its QFN SMD package supports compact RF module integration.
The CHZ180AaSEB is input matched and output pre-matched. Its hermetic ceramic-metal flange package offers low parasitic effects and low thermal resistance for high-power pulsed L-band transmitters.
The CHZ8012-QJA and CHZ9012-QFA are fully matched S-band Quasi-MMIC amplifiers intended for military and commercial radar systems. Their SMD packages simplify integration compared with unmatched power transistors requiring external RF matching networks.
Typical uses include:
L-band and S-band pulsed radar
Radar driver and final power stages
Phased-array transmit modules
Aerospace and defense RF systems
Commercial radar transmitters
RF test and instrumentation equipment
Frequently Asked Questions
Q1: Which model is suitable as an L-band driver?
The CHZ015AaQEG is the dedicated 15 W L-band driver. It covers 1.2–1.4 GHz and is supplied in a compact QFN package.
Q2: Which CHZ device provides the highest output power?
The CHZ180AaSEB is the highest-power model in this group. UMS identifies it as a 180 W L-band HPA, while the product selector lists a typical power value of 200 W.
Q3: What is the difference between CHZ8012-QJA and CHZ9012-QFA?
The CHZ8012-QJA is a 12 W S-band amplifier suitable for driver stages. The CHZ9012-QFA provides 65 W and is intended for higher-power output stages. Both are fully matched to 50 Ω and supplied in QFN packages.
Q4: Is CHZ180AaSEB fully internally matched?
The CHZ180AaSEB has an internally matched input and a pre-matched output. Final system implementation should follow the matching, biasing and thermal recommendations in the UMS datasheet.
Q5: Which models are easiest to integrate into an S-band module?
The CHZ8012-QJA and CHZ9012-QFA provide fully matched 50 Ω RF interfaces and RoHS-compliant SMD packages, reducing the need for external input and output matching circuits.
